San’an Optoelectronics Hunan Semiconductor Base was put into production today: a total investment of 16 billion yuan

IT House June 23 News According to the Science and Technology Innovation Board Daily, today, the first phase project of Sanan Optoelectronics Hunan semiconductor Base with a total investment of 16 billion yuan was put into production, which will build the first domestic and the world’s third vertical integration of silicon carbide. After the industrial chain is fully completed and put into production, it can produce 30,000 6-inch silicon carbide wafers per month, and is expected to achieve annual sales of 12 billion yuan.

IT Home has learned that silicon carbide is an ideal material for extreme power devices because of its stable properties, and power devices are one of the important basic components in the power electronics industry and are widely used in power conversion and circuit control of power equipment. field.

In the global market, for a long time, the industrial chain of various parts of the upstream preparation of silicon carbide has been divided up by a few foreign companies. However, in recent years, a relatively complete silicon carbide industry chain system has been initially established in China, including IDM manufacturers CRRC Times Electric, Yangjie Electronics, etc., epitaxial wafer companies Tianyu Semiconductor, Han Tiancheng, etc. Some manufacturers have achieved phased progress.

In the downstream, silicon carbide devices are widely used in the field of power electronics. Typical markets include rail transit, power factor correction power supplies, wind power, photovoltaics, new energy vehicles, charging piles, and uninterruptible power supplies.

In addition, according to the forecast of the China Business Industry Research Institute, the market for silicon carbide devices will continue to grow due to the development of the new energy vehicle industry in the future, and the market size is expected to reach US$700 million in 2021.

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